The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Nov. 09, 2015
Macronix International Co., Ltd., Hsinchu, TW;
Huai-Yu Cheng, White Plains, NY (US);
Hsiang-Lan Lung, Ardsley, NY (US);
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A Ga—Sb—Ge family of phase change memory materials is described, including GaSbGe, wherein a Ga atomic concentration x is within a range from 20% to 45%, a Sb atomic concentration y is within a range from 25% to 40% and a Ge atomic concentration z is within a range from 25% to 55%, is described wherein the material has a crystallization transition temperature Tgreater than 360° C. Adding impurities including one or more element selected from silicon Si, carbon C, oxygen O and nitrogen N, can also increase the crystallization transition temperature Tto temperatures greater than 400° C., and also reduce reset current.