The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
May. 05, 2015
Applicant:
Nexperia B.v., Nijmegen, NL;
Inventors:
Johannes Josephus Theodorus Marinus Donkers, Eindhoven, NL;
Stephan Bastiaan Simon Heil, Eindhoven, NL;
Jan Sonsky, Louvain, BE;
Assignee:
Nexperia B.V., Nijmegen, NL;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 29/778 (2006.01); H01L 29/45 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 21/285 (2006.01); H01L 29/47 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7839 (2013.01); H01L 21/28581 (2013.01); H01L 21/31 (2013.01); H01L 21/31111 (2013.01); H01L 29/41725 (2013.01); H01L 29/42316 (2013.01); H01L 29/452 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/2003 (2013.01);
Abstract
A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a capping layer on the metal, the capping layer comprising a diffusion barrier, wherein the capping layer is patterned to form a pattern comprising regions of the contact covered by the capping layer and regions of the contact that are uncovered.