The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Apr. 14, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andrew Christopher Graeme Wood, St. Jakob im Rosental, AT;

Oliver Blank, Villach, AT;

Martin Poelzl, Ossiach, AT;

Martin Vielemeyer, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 29/04 (2006.01); H01L 27/11526 (2017.01); H01L 29/423 (2006.01); H01L 29/8605 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 27/0629 (2013.01); H01L 29/04 (2013.01); H01L 29/0696 (2013.01); H01L 29/401 (2013.01); H01L 29/66666 (2013.01); H01L 29/66734 (2013.01); H01L 29/7803 (2013.01); H01L 29/7804 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 27/11526 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01); H01L 29/861 (2013.01); H01L 29/8605 (2013.01);
Abstract

A semiconductor device includes a semiconductor body, having a first surface, a gate electrode structure, which includes polycrystalline silicon, of an IGFET in a first trench extending from the first surface into the semiconductor body. The device also includes a semiconductor element, which is different from the gate electrode structure of the IGFET and includes polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the IGFET and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body.


Find Patent Forward Citations

Wood, Andrew Christopher Graeme. (2018). Semiconductor device having a polycrystalline silicon igfet (U.S. Patent No. 9917160). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9917160

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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