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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9917088 B1

PDFFull Text
Date of Patent:
Mar. 13, 2018

Filed:

Nov. 28, 2016

Finfet contact structure and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ming-Yuan Wu, Hsin-Chu, TW;

Yen-Po Lin, Taipei, TW;

Yu-Shan Lu, Zhubei, TW;

Che-Yuan Hsu, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Reema Patel

Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 29/165 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/8238 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/26506 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0922 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 21/3086 (2013.01);
Abstract

A device comprises a substrate comprising a first portion and a second portion separated by an isolation region, a first gate structure over the first portion, a first drain/source region and a second drain/source region in the first portion and on opposite sides of the first gate structure, wherein the first drain/source region and the second drain/source have concave surfaces, a second gate structure over the second portion and a third drain/source region and a fourth drain/source region in the second portion and on opposite sides of the second gate structure, wherein the third drain/source region and the fourth drain/source have the concave surfaces.

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