The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Jan. 09, 2017
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Hong Tao Ge, Shanghai, CN;
Xiao Yan Bao, Shanghai, CN;
Abstract
The present disclosure provides semiconductor structures and fabrication methods thereof. An exemplary semiconductor structure includes an insulation material layer having a top semiconductor layer having transistor regions formed on a top surface of the insulation material layer; isolation structures formed in the top semiconductor layer between adjacent transistor regions; a first dielectric layer formed over the top semiconductor layer; a first heat-conducting layer having a thermal conductivity higher than a thermal conductivity of the isolation structure and passing through the insulation material layer, the top semiconductor layer and the first dielectric layer; a second dielectric layer formed over the first dielectric layer; an interconnect structure formed in the second dielectric layer; and a bottom layer conductive via passing through the heat-conducting layer and a partial thickness of the second dielectric layer, and electrically connected with the interconnect structure.