The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2018

Filed:

Aug. 04, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Himani Suhag Kamineni, Mechanicville, NY (US);

Vimal Kumar Kamineni, Mechanicville, NY (US);

Daniel Smith, Ballston Spa, NY (US);

Maxwell Lippitt, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/30625 (2013.01); H01L 23/5226 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 29/41741 (2013.01); H01L 29/4232 (2013.01); H01L 29/66666 (2013.01);
Abstract

One illustrative method disclosed includes, among other things, forming a semiconductor device above a semiconducting substrate, forming a device level contact to the semiconductor device and, after forming the device level contact, performing at least one common process operation so as to form a through-substrate-via (TSV) in a trench in the substrate, a TSV contact structure that is conductively coupled to the TSV and a conductive metallization element that is conductively coupled to the device level contact.


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