The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Sep. 09, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chihy-Yuan Cheng, Tainan, TW;
Chun-Chang Wu, Nantou County, TW;
Shun-Shing Yang, Tainan, TW;
Ching-Sen Kuo, Taipei, TW;
Feng-Jia Shiu, Hsinchu County, TW;
Chun-Chang Chen, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a patterned layer on a substrate having a first region and a second region being adjacent each other. The patterned layer includes first features in the first region. The second region is free of the patterned layer. The method further includes forming a material layer on the patterned layer and the substrate; forming a first guard ring disposed in the second region and surrounding the first features; forming a flowable-material (FM) layer over the material layer; forming a patterned resist layer over the FM layer, wherein the patterned resist layer includes a plurality of openings; and transferring the plurality of openings to the material layer.