The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Oct. 21, 2015
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Feng Q. Liu, San Jose, CA (US);
Ben-Li Sheu, Sunnyvale, CA (US);
David Knapp, Santa Clara, CA (US);
David Thompson, San Jose, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); C23C 16/00 (2006.01); H01L 21/02 (2006.01); C23C 16/18 (2006.01); H01L 21/285 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02271 (2013.01); C23C 16/18 (2013.01); C23C 16/34 (2013.01); H01L 21/28556 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 23/53238 (2013.01); H01L 21/76873 (2013.01);
Abstract
Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.