The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Sep. 26, 2014
Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;
Yuhang Zhao, Shanghai, CN;
Yong Wang, Shanghai, CN;
Xiaoxu Kang, Shanghai, CN;
Yan Chen, Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD, Shanghai, CN;
Abstract
A capacitive silicon microphone comprises: a first dielectric layer sets on a substrate with a back cavity, a lower polar plate which is located over the back cavity, a first elastic member of which an inner edge is connected with the edge of the lower polar plate and an outer edge is located on the upper surface of the first dielectric layer, a second dielectric layer which is located on the outer edge of the first elastic member and right above the first dielectric layer, an upper polar plate which has a plurality of release holes and is formed above the lower polar plate with an air gap in between, a second elastic member of which an inner edge is connected with the edge of the upper polar plate and an outer edge is located on the upper surface of the second dielectric layer.