The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Jul. 07, 2016
Win Semiconductor Corp., Taoyuan, TW;
Jui-Pin Chiu, Taoyuan, TW;
Shu-Hsiao Tsai, Taoyuan, TW;
Rong-Hao Syu, Taoyuan, TW;
Cheng-Kuo Lin, Taoyuan, TW;
Win Semiconductors Corp., Taoyuan, TW;
Abstract
A heterojunction bipolar transistor, comprising an elongated base mesa, an 'H' shaped emitter, two base electrodes, an elongated collector, and two elongated collector electrodes. The 'H' shaped emitter is formed on the base mesa and has two parallel bars connected by a cross-bar. Two elongated emitter electrodes are formed respectively on the two parallel bars of the “H” shaped emitter. The “H” shaped emitter has two recesses respectively on two opposite sides of the cross-bar between the two parallel bars. The two base electrodes are formed on the base mesa respectively at the two recesses of the “H” shaped emitter, each of which has a base via hole near a center of the base mesa. The elongated collector is formed below the base mesa. The two elongated collector electrodes are formed on the collector respectively at two opposite sides of the base mesa.