The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Apr. 22, 2015
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Tim Boettcher, Hamburg, DE;

Reza Behtash, Hamburg, DE;

Thomas Igel-Holtzendorff, Hamburg, DE;

Linpei Zhu, Shanghai, CN;

Assignee:

Nexperia B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 21/67 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/404 (2013.01); H01L 21/67069 (2013.01); H01L 29/063 (2013.01); H01L 29/0696 (2013.01); H01L 29/407 (2013.01); H01L 29/66143 (2013.01); H01L 29/8725 (2013.01);
Abstract

A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body.


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