The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Jun. 21, 2016
Kiseok Suh, Hwaseong-si, KR;
Gwanhyeob Koh, Seoul, KR;
Yoonjong Song, Hwaseong-si, KR;
Samsung Electronics Co, Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes an active region defining an isolation region. First and second cell interconnection structures are on the active region and the isolation region, and have line shapes that are parallel to each other. An isolation pattern is on the active region and the isolation region. The isolation pattern is between the first and second cell interconnection structures. Contact structures are between the first and second cell interconnection structures. The contact structures are at both sides of the isolation pattern and overlap the active region. Insulating patterns are between the first and second cell interconnection structures. The insulating patterns are at both sides of the isolation pattern and overlap the isolation region. Common source regions are under the first and second cell interconnection structures. The common source regions are in the active region. An isolating gate pattern that has a line shape is under the isolation pattern.