The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Jun. 18, 2015
Omnivision Technologies, Inc., Santa Clara, CA (US);
Dajiang Yang, San Jose, CA (US);
Gang Chen, San Jose, CA (US);
Oray Orkun Cellek, Mountain View, CA (US);
Zhenhong Fu, San Jose, CA (US);
Chen-Wei Lu, San Jose, CA (US);
Duli Mao, Sunnyvale, CA (US);
Dyson H. Tai, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.