The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Oct. 26, 2016
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Chun-Jun Zhuang, Kaohsiung, TW;

Wei-Hang Tai, Kaohsiung, TW;

Pin-Ha Chuang, Kaohsiung, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/24 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/17 (2013.01); H01L 23/24 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/17155 (2013.01); H01L 2224/17179 (2013.01); H01L 2224/17517 (2013.01); H01L 2224/73204 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06568 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device includes a first semiconductor die, a second semiconductor die and a plurality of supporting structures. The first semiconductor die includes a plurality of first bumps disposed adjacent to a first active surface thereof. The second semiconductor die includes a plurality of second bumps disposed adjacent to a second active surface thereof. The second bumps are bonded to the first bumps. The supporting structures are disposed between the first active surface of the first semiconductor die and the second active surface of the second semiconductor die. The supporting structures are electrically isolated and are disposed adjacent to a peripheral region of the second active surface of the second semiconductor die.


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