The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Nov. 29, 2011
Applicants:

Hidehiro Yanai, Toyama, JP;

Shin Hiyama, Toyama, JP;

Toru Kakuda, Toyama, JP;

Toshiya Shimada, Toyama, JP;

Tomihiro Amano, Toyama, JP;

Inventors:

Hidehiro Yanai, Toyama, JP;

Shin Hiyama, Toyama, JP;

Toru Kakuda, Toyama, JP;

Toshiya Shimada, Toyama, JP;

Tomihiro Amano, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); B08B 6/00 (2006.01); H01J 37/32 (2006.01); G03F 7/42 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32458 (2013.01); G03F 7/427 (2013.01); H01J 37/321 (2013.01); H01J 37/32449 (2013.01); H01J 37/32633 (2013.01); H01L 21/31138 (2013.01);
Abstract

A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.


Find Patent Forward Citations

Yanai, Hidehiro. (2018). Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatus (U.S. Patent No. 9911580). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9911580

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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