The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Feb. 16, 2017
Applicant:

Avalanche Technology, Inc., Fremont, CA (US);

Inventors:

Ebrahim Abedifard, San Jose, CA (US);

Parviz Keshtbod, Los Altos Hills, CA (US);

Assignee:

Avalanche Technology, Inc., Fremont, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/1697 (2013.01);
Abstract

A non-volatile memory system includes a first circuit and a second circuit both coupled to a magnetoresistance tunnel junction (MTJ) cell to substantially reduce the level of current flowing through the MTJ with rise in temperature, as experienced by the MTJ. The first circuit is operable to adjust a slope of a curve representing current as a function of temperature and the second circuit is operable to adjust a value of the current level through the MTJ to maintain current constant or to reduce current when the temperature increases. This way sufficient current is provided for the MTJ at different temperatures to prevent write failure, over programming, MTJ damage and waste of current.


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