The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Feb. 19, 2014
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Kenichi Nagata, Ibaraki, JP;

Tomio Otsuki, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22C 9/06 (2006.01); H01J 37/34 (2006.01); C22F 1/08 (2006.01); C23C 14/16 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C22C 9/06 (2013.01); C22F 1/08 (2013.01); C23C 14/165 (2013.01); C23C 14/3414 (2013.01); H01J 37/3429 (2013.01);
Abstract

A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at % of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 μm or less, and a number of precipitates is 500 precipitates/mmor less. It is thereby possible to provide a high purity copper-cobalt alloy sputtering target capable of inhibiting the generation of particles during sputtering, and in particular improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration.


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