The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Mar. 31, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Lin Chu, Hsinchu, TW;
Hsi-Yu Kuo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
The semiconductor device for fabricating an IC is provided. The semiconductor device includes a deep n-well (DNW), a first inverter, a second inverter, an electrical path, and a charge-dispelling device. The DNW is formed in a substrate. The first inverter is formed inside the DNW. The second inverter is formed in the substrate and outside the DNW. The electrical path is arranged between the first inverter and the second inverter. The charge-dispelling device is connected between the ground of the first inverter and the ground of the second inverter to develop a bypass path. The impedance of the bypass path is lower than the impedance of the electrical path.