The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Sep. 10, 2015
Csmc Technologies Fab1 Co., Ltd., Wuxi New District, Jiangsu, CN;
Shukun Qi, Jiangsu, CN;
CSMC Technologies Fab1 Co., Ltd., Wuxi New District, Jiangsu, CN;
Abstract
A lateral insulated gate bipolar transistor comprises a substrate (); an anode terminal located on the substrate, comprising: an N-type buffer region () located on the substrate (); a P well () located in the N-type buffer region; an N-region () located in the P well (); two P+ shallow junctions () located on a surface of the P well (); and an N+ shallow junction () located between the two P+ shallow junctions (); a cathode terminal located on the substrate; a draft region () between the anode terminal and cathode terminal; and a gate () between the anode terminal and cathode terminal.