The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Apr. 26, 2016
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/336 (2006.01); H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/76224 (2013.01); H01L 21/76232 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01);
Abstract
The threshold voltage of parasitic transistors formed at corners of shallow trench isolation regions is increased and mobility decreased by employing a high-K dielectric material. Embodiments include STI regions comprising a liner of a high-K dielectric material extending proximate trench corners. Embodiments also include STI regions having a recess formed in the trench, wherein the recess contains a high-K dielectric material, in the form of a layer or spacer, extending proximate trench corners.