The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Nov. 25, 2016
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Hans Weber, Bayerisch Gmain, DE;
Christian Fachmann, Fuernitz, AT;
Daniel Tutuc, St. Niklas an der Drau, AT;
Andreas Voerckel, Finkenstein, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 21/027 (2006.01); H01L 21/66 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/0274 (2013.01); H01L 21/3081 (2013.01); H01L 22/12 (2013.01); H01L 23/544 (2013.01); H01L 29/4236 (2013.01); H01L 29/66666 (2013.01); H01L 2223/54426 (2013.01);
Abstract
By using a single trench mask, first and second trenches are formed that extend from a main surface into a semiconductor layer. A foundation is formed that includes first regions in and/or directly adjoining the first trenches. A superstructure is formed in alignment with the foundation by using position information directly obtained from structures formed in the first and/or the second trenches.