The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Feb. 28, 2017
Applicant:

Win Semiconductors Corp., Kuei Shan Hsiang, Tao Yuan Shien, TW;

Inventors:

Shu-Hsiao Tsai, Tao Yuan Shien, TW;

Re Ching Lin, Tao Yuan Shien, TW;

Pei-Chun Liao, Tao Yuan Shien, TW;

Cheng-Kuo Lin, Tao Yuan Shien, TW;

Yung-Chung Chin, Tao Yuan Shien, TW;

Chih-Feng Chiang, Tao Yuan Shien, TW;

Assignee:

WIN SEMICONDUCTORS CORP., Guishan District, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 27/20 (2006.01); H03H 9/17 (2006.01); H03H 9/13 (2006.01); H01L 29/93 (2006.01); H01L 23/66 (2006.01); H01L 29/20 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 21/8252 (2006.01); H03F 3/213 (2006.01); H01L 41/311 (2013.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01);
U.S. Cl.
CPC ...
H01L 27/20 (2013.01); H01L 21/8252 (2013.01); H01L 23/66 (2013.01); H01L 27/0605 (2013.01); H01L 29/20 (2013.01); H01L 29/66174 (2013.01); H01L 29/93 (2013.01); H01L 41/311 (2013.01); H03F 3/213 (2013.01); H03H 9/02007 (2013.01); H03H 9/0542 (2013.01); H03H 9/13 (2013.01); H03H 9/171 (2013.01); H03H 9/173 (2013.01); H01L 2223/6655 (2013.01);
Abstract

An integrated structure of acoustic wave device and varactor comprises an acoustic wave device and a varactor formed on a first part and a second part of a semiconductor substrate respectively. The acoustic wave device comprises an acoustic wave device upper structure and a first part of a bottom epitaxial structure. The acoustic wave device upper structure is formed on the first part of the bottom epitaxial structure. The varactor comprises a varactor upper structure and a second part of the bottom epitaxial structure. The varactor upper structure is formed on the second part of the bottom epitaxial structure. The integrated structure of the acoustic wave device and the varactor formed on the same semiconductor substrate is capable of reducing the module size, optimizing the impedance matching, and reducing the signal loss between the varactor and the acoustic wave device.


Find Patent Forward Citations

Loading…