The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Feb. 23, 2017
Globalfoundries Inc., Grand Cayman, KY;
Jiehui Shu, Clifton Park, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Haifeng Sheng, Rexford, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of removing the CESL from small canyon TS structures of a MOSFET device while maintaining gate cap height and the resulting device are provided. Embodiments include providing two gates laterally separated over and perpendicular to a fin of a semiconductor device, each gate having sidewall spacers and a nitride cap; forming a conformal SiN CESL on bottom and side surfaces of a trench formed between opposing spacers between the gates; filling the trench with oxide; planarizing the spacers, nitride caps, oxide, and CESL; removing the oxide; forming a topological flat-SiN layer over the spacers, nitride caps, and CESL; removing the topological flat-SiN layer from side and bottom surfaces of the trench; removing the CESL and the topological flat-SiN layer down to a top surface of the spacers; and performing contact metallization.