The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Nov. 28, 2013
Applicant:

Mitsubishi Materials Corporation, Tokyo, JP;

Inventors:

Toshiaki Fujita, Naka, JP;

Hiroshi Tanaka, Naka, JP;

Noriaki Nagatomo, Naka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01C 7/10 (2006.01); H01C 7/00 (2006.01); G01K 7/22 (2006.01); C23C 14/00 (2006.01); H01C 17/12 (2006.01); C23C 14/06 (2006.01); C23C 14/34 (2006.01); H01C 7/04 (2006.01); H01C 17/065 (2006.01);
U.S. Cl.
CPC ...
H01C 7/008 (2013.01); C23C 14/0036 (2013.01); C23C 14/0641 (2013.01); C23C 14/34 (2013.01); C23C 14/3414 (2013.01); G01K 7/22 (2013.01); H01C 7/042 (2013.01); H01C 17/06513 (2013.01); H01C 17/12 (2013.01);
Abstract

Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: CrAlN(0.70≦y/(x+y)≦0.95, 0.4≦z≦0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using a Cr—Al alloy sputtering target.


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