The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2018
Filed:
Dec. 07, 2015
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Kentaro Kumaki, Joetsu, JP;
Satoshi Watanabe, Joetsu, JP;
Koji Hasegawa, Joetsu, JP;
Daisuke Domon, Joetsu, JP;
Kenji Yamada, Joetsu, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); C08L 25/08 (2006.01); C08L 33/14 (2006.01); C08L 25/18 (2006.01); C08F 220/30 (2006.01); C08F 220/34 (2006.01); C08F 220/26 (2006.01); C08F 226/06 (2006.01); C08F 226/02 (2006.01); G03F 7/11 (2006.01); C08F 220/36 (2006.01); G03F 7/004 (2006.01); G03F 7/039 (2006.01); G03F 7/32 (2006.01); C08F 220/28 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); C08F 220/26 (2013.01); C08F 220/30 (2013.01); C08F 220/34 (2013.01); C08F 220/36 (2013.01); C08F 226/02 (2013.01); C08F 226/06 (2013.01); C08L 25/08 (2013.01); C08L 25/18 (2013.01); C08L 33/14 (2013.01); G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0397 (2013.01); G03F 7/11 (2013.01); G03F 7/325 (2013.01); C08F 2220/283 (2013.01); C08F 2220/285 (2013.01); G03F 7/2004 (2013.01); G03F 7/2041 (2013.01);
Abstract
A shrink material is provided comprising a specific polymer and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.