The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2018

Filed:

Sep. 15, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sung Je Kim, Santa Clara, CA (US);

Laksheswar Kalita, Mumbai, IN;

Yogita Pareek, Jaipur, IN;

Ankur Kadam, Mumbai, IN;

Prerna Sonthalia Goradia, Mumbai, IN;

Bipin Thakur, Mumbai, IN;

Dmitry Lubomirsky, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 22/48 (2006.01); C23C 22/56 (2006.01); C23C 22/66 (2006.01); C23C 14/22 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/673 (2006.01); C23F 1/32 (2006.01); C23F 1/36 (2006.01); C23F 1/16 (2006.01); C23F 1/20 (2006.01);
U.S. Cl.
CPC ...
C23C 22/66 (2013.01); C23C 14/22 (2013.01); C23C 16/45525 (2013.01); C23C 16/45527 (2013.01); C23C 16/50 (2013.01); C23C 22/56 (2013.01); H01J 37/32009 (2013.01); H01J 37/3244 (2013.01); H01J 37/3255 (2013.01); H01J 37/32532 (2013.01); H01L 21/67069 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 21/67306 (2013.01); C23F 1/16 (2013.01); C23F 1/20 (2013.01); C23F 1/32 (2013.01); C23F 1/36 (2013.01); Y10T 428/24322 (2015.01); Y10T 428/24355 (2015.01);
Abstract

A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NHOH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlOfilm having a thickness of 4 to 8 nm and a surface roughness less than 0.05 μm greater than a surface roughness of the component without the AlOfilm.


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