The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

May. 31, 2016
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Shih-Yen Lin, Hsinchu, TW;

Chi-Wen Liu, Hsinchu, TW;

Chong-Rong Wu, New Taipei, TW;

Xian-Rui Chang, Chu-Pei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/0262 (2013.01); H01L 21/02568 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78618 (2013.01); H01L 29/78648 (2013.01);
Abstract

The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.


Find Patent Forward Citations

Loading…