The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jan. 11, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Wen-Jiun Shen, Yunlin County, TW;
Chia-Jong Liu, Ping-Tung County, TW;
Chung-Fu Chang, Tainan, TW;
Yen-Liang Wu, Taipei, TW;
Man-Ling Lu, Taoyuan County, TW;
Yi-Wei Chen, Taichung, TW;
Jhen-Cyuan Li, New Taipei, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/66795 (2013.01); H01L 29/7843 (2013.01); H01L 29/7847 (2013.01);
Abstract
The present invention provides a semiconductor structure, comprising a substrate, a gate structure, a source/drain region and at least a dislocation. The gate structure is disposed on the substrate. The source/drain region is disposed in the substrate at two sides of the gate structure. The dislocation is located in the source/drain region, and is asymmetrical relating to a middle axis of the source/drain region.