The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Feb. 24, 2016
General Electric Company, Schenectady, NY (US);
Peter Almern Losee, Clifton Park, NY (US);
Ljubisa Dragoljub Stevanovic, Niskayuna, NY (US);
Gregory Thomas Dunne, Rexford, NY (US);
Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);
GENERAL ELECTRIC COMPANY, Schenectady, NY (US);
Abstract
Embodiments of a silicon carbide (SiC) device are provided herein. In some embodiments, a silicon carbide (SiC) device may include a gate electrode disposed above a SiC semiconductor layer, wherein the SiC semiconductor layer comprises: a drift region having a first conductivity type; a well region disposed adjacent to the drift region, wherein the well region has a second conductivity type; and a source region having the first conductivity type disposed adjacent to the well region, wherein the source region comprises a source contact region and a pinch region, wherein the pinch region is disposed only partially below the gate electrode, wherein a sheet doping density in the pinch region is less than 2.5×10cm, and wherein the pinch region is configured to deplete at a current density greater than a nominal current density of the SiC device to increase the resistance of the source region.