The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Dec. 16, 2016
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Masahiro Ogawa, Osaka, JP;
Masahiro Ishida, Osaka, JP;
Daisuke Shibata, Kyoto, JP;
Ryo Kajitani, Osaka, JP;
Abstract
Provided is a semiconductor device in which electron mobility is improved by applying sufficiently large tensile stress in a predetermined direction without occurrence of cracks in a nitride semiconductor. The semiconductor device includes: substrate (), electron transit layer () that is disposed on substrate () and is formed by GaN; and electron supply layer () that is disposed on electron transit layer () and is formed by AlGaN. A coefficient of thermal expansion of substrate () is different between a first direction in a main surface of substrate () and a second direction that is perpendicular to the first direction in the main surface, and tensile stress occurs in electron transit layer ().