The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Dec. 02, 2015
Applicants:

Jin-hyuk Yoo, Hwaseong-si, KR;

Dae-hyun Jang, Hwaseong-si, KR;

Yoo-chul Kong, Seoul, KR;

Kyoung-sub Shin, Seongnam-si, KR;

Inventors:

Jin-Hyuk Yoo, Hwaseong-si, KR;

Dae-Hyun Jang, Hwaseong-si, KR;

Yoo-Chul Kong, Seoul, KR;

Kyoung-Sub Shin, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/1157 (2017.01); H01L 23/48 (2006.01); H01L 27/11573 (2017.01); H01L 27/11582 (2017.01); H01L 23/528 (2006.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 23/48 (2013.01); H01L 23/528 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 29/0649 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Provided is a semiconductor device. The semiconductor device includes a conductive pattern disposed on a semiconductor substrate. First and second conductive lines disposed on the conductive pattern and located at the same level as each other, are provided. An isolation pattern is disposed between the first and second conductive lines. A first vertical structure passing through the first conductive line and conductive pattern is provided. A second vertical structure passing through the second conductive line and conductive patterns is provided. An auxiliary pattern passing through the conductive pattern and in contact with the isolation pattern is provided.


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