The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jun. 01, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Ching Huang, Taipei, TW;
Tsung-Yu Chiang, New Taipei, TW;
Ya-Wen Yang, Xiushui Township, Changhua County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate and an isolation structure formed over the substrate. The FinFET device structure includes a first gate structure and a second gate structure formed over the fin structure. The first gate structure has a first top width in a direction that is parallel to the fin structure, the second gate structure has a second top width in a direction that is parallel to the fin structure, and the first top width is greater than the second top width.