The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Jul. 25, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventor:
Kuang-Hui Tang, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/10 (2006.01); H01L 31/00 (2006.01); H01L 23/544 (2006.01); H01L 23/00 (2006.01); H01L 21/762 (2006.01); H01L 23/58 (2006.01); H01L 21/784 (2006.01); H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); H01L 21/56 (2013.01); H01L 21/76232 (2013.01); H01L 21/76898 (2013.01); H01L 21/784 (2013.01); H01L 23/481 (2013.01); H01L 23/562 (2013.01); H01L 23/585 (2013.01); H01L 21/78 (2013.01); H01L 22/34 (2013.01); H01L 23/522 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/5446 (2013.01); H01L 2223/54426 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/14 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/35121 (2013.01); H01L 2924/37001 (2013.01);
Abstract
A crack-stopping structure includes a semiconductor wafer comprising a plurality of dies defined by a plurality of scribe line regions, a plurality of metal patterns formed in the scribe line regions, and a plurality of groups of through silicon holes (TSHs) formed in the scribe line regions. The wafer further includes a front side and a back side, and the TSHs respectively include at least a bottom opening formed in the bottom side of the wafer. The groups of TSHs are formed between the metal patterns and the dies.