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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9899226 B1

PDFFull Text
Date of Patent:
Feb. 20, 2018

Filed:

Mar. 13, 2015

Semiconductor device and fabrication method thereof

Applicant:

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

Ho Kyun Ahn, Daejeon, KR;

Hae Cheon Kim, Daejeon, KR;

Jong Won Lim, Daejeon, KR;

Dong Min Kang, Daejeon, KR;

Yong Hwan Kwon, Daejeon, KR;

Seong Il Kim, Daejeon, KR;

Zin Sig Kim, Daejeon, KR;

Eun Soo Nam, Daejeon, KR;

Byoung Gue Min, Sejong, KR;

Hyung Sup Yoon, Daejeon, KR;

Kyung Ho Lee, Daejeon, KR;

Jong Min Lee, Daejeon, KR;

Kyu Jun Cho, Daejeon, KR;

Assignee:

ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Peniel M Gemedzoe

Assistant Examiner:

Christopher Johnson

Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/51 (2006.01); H01L 29/20 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28264 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/42316 (2013.01); H01L 29/51 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/452 (2013.01); H01L 29/513 (2013.01);
Abstract

Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.

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