The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Nov. 24, 2015
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Meng-Heng Lin, Taichung, TW;

Bo-Lun Wu, Changhua County, TW;

Chien-Min Wu, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0026 (2013.01); G11C 13/004 (2013.01); G11C 13/0033 (2013.01); G11C 2213/79 (2013.01); G11C 2213/82 (2013.01);
Abstract

A high-reliability resistive random access memory (RRAM). A memory cell of a memory cell array is controlled via a word line, a bit line and a source line. The control unit of the RRAM has a word line decoder, a bit line decoder, and a source line decoder and switch circuit. The word line decoder, the bit line decoder and the source line decoder respectively control the voltage applied to the word line, the voltage applied to the bit line, and the voltage applied to the source line. The switch circuit is switched between a first state and a second state to operate the bit line decoder to apply a voltage to the bit line to read the memory cell and to operate the source line decoder to apply a voltage to the source line to read the memory cell alternately.


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