The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
Dec. 19, 2016
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Kazunari Fujii, Tokyo, JP;
Toshio Negishi, Yokohama, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B41J 2/045 (2006.01); H02H 9/04 (2006.01); H01L 23/525 (2006.01); H01L 23/60 (2006.01); H01L 27/02 (2006.01); B41J 2/35 (2006.01); B41J 2/375 (2006.01);
U.S. Cl.
CPC ...
B41J 2/04541 (2013.01); B41J 2/04586 (2013.01); H01L 23/5252 (2013.01); H01L 23/60 (2013.01); H01L 27/0266 (2013.01); H02H 9/045 (2013.01); B41J 2/35 (2013.01); B41J 2/375 (2013.01);
Abstract
A semiconductor device includes, an anti-fuse element, a transistor connected via the anti-fuse element to a power source terminal which may apply a voltage to the anti-fuse element, an ESD protection element connected to the power source terminal via a node, and a first resistive element disposed in an electric path between the node and the anti-fuse element, wherein resistance of the first resistive element increases with an increase of a voltage applied to the first resistive element.