The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2018

Filed:

Sep. 22, 2016
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Yoshinobu Nakamura, Toyama, JP;

Masayoshi Minami, Toyama, JP;

Masayuki Asai, Toyama, JP;

Kazuyuki Okuda, Toyama, JP;

Yuji Urano, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B08B 9/093 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
B08B 9/093 (2013.01); C23C 16/4404 (2013.01); C23C 16/4405 (2013.01); C23C 16/4408 (2013.01); C23C 16/4412 (2013.01); C23C 16/52 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01);
Abstract

A method of manufacturing a semiconductor device is disclosed. The method includes processing a substrate by supplying a process gas to the substrate in a process chamber. The method further includes performing a purge to an interior of the process chamber while periodically changing an internal pressure of the process chamber based on a pressure width by setting a process of supplying a purge gas into the process chamber to increase the internal pressure of the process chamber and a process of vacuum-exhausting an interior of the process chamber to decrease the internal pressure of the process chamber to one cycle and repeating the cycle a plurality of times.


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