The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Jul. 22, 2016
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Pierguido Garofalo, San Donato Milanese, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/687 (2006.01); H03K 17/06 (2006.01); G11C 7/06 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
H03K 17/063 (2013.01); G11C 7/062 (2013.01); G11C 7/10 (2013.01); G11C 7/22 (2013.01);
Abstract

Apparatuses and methods for reducing leakage currents during an off state for transistors are described herein. An example apparatus includes a switch having an input node and an output node. The switch is configured to couple a signal on the input to the output node when the switch is in an on state and is further configured to decouple the input and output nodes when the switch is in an off state. The switch includes first and second transistors, and further includes third and fourth transistors. A drain electrode of the first transistor is coupled to a source electrode of the third transistor, a drain electrode of the second transistor is coupled to a source electrode of the fourth transistor, and the drain electrodes of the third and fourth transistors are coupled together to the output node.


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