The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
May. 04, 2016
Applicants:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
National Chiao-tung University, Hsinchu, TW;
Inventors:
Yen-Teng Ho, Tainan, TW;
Yi Chang, Hsinchu County, TW;
Assignees:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
National Chiao-Tung University, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/24 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/383 (2006.01); H01L 29/778 (2006.01); H01L 29/16 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7849 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02447 (2013.01); H01L 21/02458 (2013.01); H01L 21/02568 (2013.01); H01L 21/02631 (2013.01); H01L 21/02661 (2013.01); H01L 21/383 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7781 (2013.01); H01L 29/267 (2013.01);
Abstract
A semiconductor structure includes a substrate, a buffer layer, and a two-dimensional layered material. The buffer layer is above the substrate and is formed from one of SiC and a nitride-based material. The two-dimensional layered material is above the buffer material. The construction as such permits formation, e.g., of a channel of a transistor from the two-dimensional layered material.