The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Sep. 06, 2016
Applicants:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;

Inventors:

Yasuyuki Sonoda, Seoul, KR;

Masahiko Nakayama, Seoul, KR;

Min Suk Lee, Seongnam-si, KR;

Masatoshi Yoshikawa, Seoul, KR;

Kuniaki Sugiura, Seoul, KR;

Ji Hwan Hwang, Dongjak-gu Seoul, KR;

Assignees:

Toshiba Memory Corporation, Tokyo, JP;

SK Hynix, Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); G11C 11/161 (2013.01);
Abstract

According to one embodiment, a magnetic memory includes a first metal layer including a first metal, a second metal layer on the first metal layer, the second metal layer including a second metal which is more easily oxidized than the first metal, the second metal layer having a first sidewall portion which contacts the first metal layer, and the second metal layer having a second sidewall portion above the first sidewall portion, the second sidewall portion which steps back from the first sidewall portion, a magnetoresistive element on the second metal layer, a third metal layer on the magnetoresistive element, and a first material which contacts a sidewall portion of the magnetoresistive element and the second sidewall portion of the second metal layer, the first material including an oxide of the second metal.


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