The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Jun. 10, 2016
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chin-Shan Wang, Hsinchu, TW;
Shun-Yi Lee, Zhudong Township, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10832 (2013.01); H01L 27/1087 (2013.01); H01L 27/10826 (2013.01); H01L 27/10879 (2013.01); H01L 27/10891 (2013.01);
Abstract
A method of fabricating a semiconductor device. The method includes forming a dummy structure over a substrate, forming conductive features on opposite sides of the dummy gate structure, removing the dummy structure and a portion of the substrate beneath the dummy gate structure to form a trench, and filling the trench with a dielectric material.