The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Jan. 26, 2017
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Kenji Matsumoto, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76886 (2013.01); C23C 16/408 (2013.01); C23C 16/45525 (2013.01); C23C 16/56 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76846 (2013.01); H01L 21/76864 (2013.01); H01L 21/76871 (2013.01); H01L 21/76879 (2013.01); H01L 21/76883 (2013.01); H01L 23/5226 (2013.01); H01L 23/53238 (2013.01);
Abstract

In a Cu wiring manufacturing method for manufacturing Cu wiring that fills a recess formed in a predetermined pattern on a surface of an interlayer insulating film of a substrate, a MnOfilm that becomes a self-formed barrier film by reaction with the interlayer insulating film is formed at least on a surface of the recess by ALD. A CuOfilm that becomes a liner film is formed on a surface of the MnOfilm by CVD or ALD. An annealing process is performed on the substrate on which the CuOfilm is formed and the CuOfilm is reduced to a Cu film by oxidation-reduction reaction between the MnOfilm and the CuOfilm. A Cu-based film is formed on the Cu film obtained by reducing the CuOfilm by PVD to fill the Cu-based film in the recess.


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