The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2018

Filed:

Nov. 14, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sang-Hyun Joo, Suwon-si, KR;

KeeHo Jung, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/26 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/0466 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/14 (2013.01); G11C 16/3445 (2013.01);
Abstract

A nonvolatile memory device includes a memory cell array, a row decoder, and page buffer, and control logic. The memory cell array includes cell strings connected to select lines. Each select line is connected to two or more cell strings, each cell string includes memory cells connected to a plurality of word lines, and a select transistor is connected to a corresponding one of the select lines. The row decoder sequentially selects the select lines in a read operation. A page buffer obtains a read result of the two or more cell strings when a corresponding select line is selected and accumulates read results of the cell strings when the select lines are sequentially selected. The control logic controls a subsequent operation based on the accumulated read results.


Find Patent Forward Citations

Loading…