The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
May. 13, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Hyung-Joo Lee, Suwon-si, KR;
Won-Joo Park, Hwaseong-si, KR;
Seuk-Hwan Choi, Suwon-si, KR;
Byung-Gook Kim, Seoul, KR;
Dong-Hoon Chung, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method for measuring a critical dimension of a mask pattern, including generating a mask pattern using an optically proximity-corrected (OPC) mask design including at least one block; measuring a first critical dimension of a target-region of interest (target-ROI) including neighboring blocks having a same critical dimension (CD), in the mask pattern; determining a group region of interest including the target-ROI and at least one neighboring block adjacent to the target-ROI; measuring second CDs of the neighboring blocks of the group region of interest; and correcting a measuring value of the first CD using a measuring value of the second CDs.