The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Jun. 14, 2016
Freescale Semiconductor, Inc., Austin, TX (US);
Nikolas Bradley Sumikawa, Chandler, AZ (US);
Chen He, Cedar Park, TX (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A fault analysis method comprises: receiving fault data from wafer level testing that identifies locations and test results of a plurality of die; applying a kernel transform to the fault data to produce cluster data, where the kernel transform defines a fault impact distribution that defines fault contribution from the failed die to local die within an outer radial boundary of the fault impact distribution. Applying the kernel transform comprises: centering the fault impact distribution at a location of each die that failed wafer level testing, associating each local die that falls within the outer radial boundary with a respective fault contribution value according to the fault impact distribution, and accruing fault contribution values associated with each respective die of the plurality of die to produce a cluster value for the respective die, which correlates to a probability of failure of the respective die at a future time.