The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Mar. 19, 2013
Applicant:
Jx Nippon Mining & Metals Corporation, Tokyo, JP;
Inventors:
Kotaro Nagatsu, Ibaraki, JP;
Shinichiro Senda, Ibaraki, JP;
Assignee:
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C22F 1/18 (2006.01); C22C 27/02 (2006.01); B22D 21/06 (2006.01); C23C 14/14 (2006.01); H01J 37/34 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B22D 21/06 (2013.01); C22C 27/02 (2013.01); C22F 1/18 (2013.01); C23C 14/14 (2013.01); H01J 37/3426 (2013.01); H01J 2237/332 (2013.01); H01L 21/2855 (2013.01); H01L 21/76843 (2013.01);
Abstract
Provided is a tantalum sputtering target, which is characterized that an average crystal grain size of the target is 50 μm or more and 200 μm or less, and variation of a crystal grain size in the target plane is 40% or higher and 60% or less. This invention aims to provide a tantalum sputtering target capable of improving the uniformity of the film thickness and reducing the variation of the resistance value (sheet resistance).