The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Jun. 24, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Zhibiao Zhou, Singapore, SG;
Ding-Lung Chen, Singapore, SG;
Chen-Bin Lin, Taipei, TW;
Sanpo Wang, Singapore, SG;
Chung-Yuan Lee, Taoyuan, TW;
Chi-Fa Ku, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device is provided in the present invention, which includes a substrate, an oxide-semiconductor layer, source/drain regions, a dielectric layer, a first gate electrode, a second gate electrode and a charge storage structure. The oxide-semiconductor layer is disposed on the first gate electrode on the substrate. The source/drain regions are disposed on the oxide-semiconductor layer. The first dielectric layer covers on the oxide-semiconductor layer and source/drain regions. A second gate electrode is disposed between source/drain regions and partially covers the oxide-semiconductor layer. The oxide-semiconductor layer may be optionally disposed between the first gate electrode and the oxide-semiconductor layer or be disposed on the second gate electrode.