The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Feb. 11, 2008
The-tu Chau, San Jose, CA (US);
Sharon Shi, San Jose, CA (US);
Qufei Chen, San Jose, CA (US);
Martin Hernandez, San Jose, CA (US);
Deva Pattanayak, Saratoga, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Kuo-in Chen, Los Altos, CA (US);
The-Tu Chau, San Jose, CA (US);
Sharon Shi, San Jose, CA (US);
Qufei Chen, San Jose, CA (US);
Martin Hernandez, San Jose, CA (US);
Deva Pattanayak, Saratoga, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Kuo-In Chen, Los Altos, CA (US);
Vishay-Siliconix, Santa Clara, CA (US);
Abstract
Ultra-low drain-source resistance power MOSFET. In accordance with an embodiment of the preset invention, a semiconductor device comprises a plurality of trench power MOSFETs. The plurality of trench power MOSFETs is formed in a second epitaxial layer. The second epitaxial layer is formed adjacent and contiguous to a first epitaxial layer. The first epitaxial layer is formed adjacent and contiguous to a substrate highly doped with red Phosphorus. The novel red Phosphorus doped substrate enables a desirable low drain-source resistance.