The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Jan. 23, 2017
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/8234 (2006.01); H01L 27/24 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); H01L 21/82345 (2013.01); H01L 45/065 (2013.01); H01L 45/122 (2013.01); H01L 45/126 (2013.01); H01L 45/144 (2013.01); H01L 45/1608 (2013.01); H01L 29/7869 (2013.01);
Abstract
A semiconductor device and a method for fabricating the semiconductor device have been provided. The method for fabricating a semiconductor device includes the steps of: forming a channel layer on a substrate; forming a gate dielectric layer on the channel layer; forming a source layer and a drain layer adjacent two sides of the gate dielectric layer; forming a bottom gate on the gate dielectric layer; forming a phase change layer on the bottom gate; and forming a top gate on the phase change layer.