The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
May. 12, 2015
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Rudolf Zelsacher, Klagenfurt, AT;
Paul Ganitzer, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/373 (2006.01); H01L 23/495 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/492 (2006.01); H01L 29/06 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 21/4853 (2013.01); H01L 21/6835 (2013.01); H01L 21/76873 (2013.01); H01L 21/78 (2013.01); H01L 23/3736 (2013.01); H01L 23/492 (2013.01); H01L 23/49575 (2013.01); H01L 23/49838 (2013.01); H01L 23/49866 (2013.01); H01L 23/562 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 29/0657 (2013.01); H01L 23/3107 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/03009 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03622 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05214 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/291 (2013.01); H01L 2224/3223 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/4823 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8382 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01068 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1301 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15153 (2013.01); H01L 2924/181 (2013.01); Y02P 80/30 (2015.11);
Abstract
A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. The semiconductor substrate has a device thickness. At least one metallisation layer is formed on the second surface of the semiconductor substrate. The metallisation layer has a thickness which is greater than the device thickness.